Year after year, evolution in computer power is heavily dependent on the manufacturer’s ability to fit more number of new components into the same amount of space upon a silicon chip. However, soon this method would be at its limits where no space would be left of the silicon chip for new components. Due to this, researchers have started looking towards new materials to replace silicon semiconductors. Moreover, the introduction of new materials might also facilitate novel paradigms for individual chip components and their overall design. The advance that holds the most potential is the ferroelectric field-effect transistor (FE-FET). These sorts of devices have the capability to switch states quickly and so can perform computation while also holding their states without any power. This helps them function as long-term memory storage, serving the needs of both RAM and ROM. FE-FET devices could make chips more space and efficient, and powerful, however, materials that have ferroelectric effects cannot be mass-produced with silicon components as they have high-temperature requirements.
A new study might have found a potential solution to this hurdle. Researchers, through two combined studies, have demonstrated the capabilities of AIScN (Scandium-Doped Aluminium Nitride). The newly discovered materials exhibit ferroelectricity and could be used to make FE-FET devices along with memristor-type memory devices at a commercial scale. This is a revolutionary advancement for Ferroelectric Materials Market as this new material does not have any setbacks involved with other ferroelectric materials and might become the future of computer manufacturing industries.
Chip designers need to quickly come up with a way to proceed against the looming limitations of processing a wide range of data with silicon. Thus, they have suggested that finding new materials that would enable memory components to be built above the processor without harming it could be the best way; essentially, they mean two-in-one devices. AIScN in this regard can be deposited at comparatively low temperatures and represents a huge possibility of directly combining the logic transistors with memory. All that was needed was to integrate the materials with the rest of the chip architecture.
FE-FET devices are not a new concept and have been pursued by engineers since the 60s because these devices could operate with extremely low power. The issue, however, was to make their fabrication compatible with the processors while making them last longer. To overcome this challenge, researchers used 2D materials that are extremely thin and can preserve a memory bit in the form of charge for years to come.
The team is optimistic about their demonstration and will continue to explore manufacturing techniques for these devices that would make their mass production easy.
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