The Global Insulated Gate Bipolar Transistor Market Report is equipped with market data from 2014 to 2024. The report gives a market overview covering key drivers and risks factors. The report is bifurcated by top global manufactures mentioning sales, revenue and prices as applicable. It also evaluates the competitive scenario of the leading players. The report expands to cover regional market data along with type and application. The report forecasts sales and revenue from 2019 to 2024. The detailed sales channel is also covered in the study.
Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device and majorly finds application in switch, pulse modulation and phase control among others. This device competes with other power semiconductor devices including power MOSFETs, Silicon-Carbide (SiC), Gallium-Nitride (GaN). IGBT has been gaining demand owing to lower switching losses and higher reliability, which highlights features including higher efficiency and better thermal performance. The increasing focus and increased investments in R&D on IGBT chip and module optimization to reduce power consumption, improve chip density, thermal resistivity and efficiency would further strengthen the position of IGBT power semiconductor market.
Scope of the Report:
The worldwide market for Insulated Gate Bipolar Transistor is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2024, from xx million US$ in 2019.
This report focuses on the Insulated Gate Bipolar Transistor in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
Market Segment by Manufacturers, this report covers
- Infineon Technologies AG
- Fujitsu Ltd
- NXP Semiconductors N.V
- STMicroelectronics N.V.
- Toshiba Corporation
- Vishay Intertechnology, Inc
- Renesas Electronics Corporation
- ROHM Co. Ltd
- Fairchild Semiconductor International, Inc
- Fuji Electric Co. Ltd
Market Segment by Regions, regional analysis covers
- North America (United States, Canada and Mexico)
- Europe (Germany, France, UK, Russia and Italy)
- Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
- South America (Brazil, Argentina, Colombia etc.)
- Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
Market Segment by Type, covers
- High <1kV
- High <1kV
- Very High >1kV
Market Segment by Applications, can be divided into
- Uninterruptible power supply (UPS)
- Electric and hybrid electric vehicles (EV/HEV)
- Industrial systems
- Consumer electronics
- Medical devices
- Others
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Insulated Gate Bipolar Transistor product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of Insulated Gate Bipolar Transistor, with price, sales, revenue and global market share of Insulated Gate Bipolar Transistor in 2017 and 2018.
Chapter 3, the Insulated Gate Bipolar Transistor competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Insulated Gate Bipolar Transistor breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, Insulated Gate Bipolar Transistor market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe Insulated Gate Bipolar Transistor sales channel, distributors, customers, research findings and conclusion, appendix and data source.