Global Ferroelectric RAM Market Growth 2019-2024

  • ID:PD014942
  • August 2019
  • LPI (LP Information)
                          

Global Ferroelectric RAM Market 2019-2024 report delivers a comprehensive research based study of the market along with the market share, forecast data, in-depth analysis, and detailed overview of the Ferroelectric RAM industry with respect to Global market. The Ferroelectric RAM market report further emphasizes on market drivers and restraints at global and regional level. For complete understanding, the report also provides market segmentation and regional market analysis.

Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory. 

FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT). 

A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary 0s and 1s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a 1 is encoded using the negative remnant polarization -Pr, and a 0 is encoded using the positive remnant polarization +Pr.In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the up or down orientation (depending on the polarity of the charge), thereby storing a 1 or 0. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say 0. If the cell already held a 0, nothing will happen in the output lines. If the cell held a 1, the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the down side. The presence of this pulse means the cell held a 1. Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.

Ferroelectric RAM was proposed by MIT graduate student Dudley Allen Buck in his master's thesis, Ferroelectrics for Digital Information Storage and Switching, published in 1952. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operates what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips (e.g. chips for smart cards) with embedded FeRAMs. Fujitsu produced devices for Ramtron until 2010. Since 2010 Ramtron's fabricators have been TI (Texas Instruments) and IBM. Since at least 2001 Texas Instruments has collaborated with Ramtron to develop FeRAM test chips in a modified 130 nm process. In the fall of 2005, Ramtron reported that they were evaluating prototype samples of an 8-megabit FeRAM manufactured using Texas Instruments' FeRAM process. Fujitsu and Seiko-Epson were in 2005 collaborating in the development of a 180 nm FeRAM process. In 2012 Ramtron was acquired by Cypress Semiconductor. FeRAM research projects have also been reported at Samsung, Matsushita, Oki, Toshiba, Infineon, Hynix, Symetrix, Cambridge University, University of Toronto, and the Interuniversity Microelectronics Centre (IMEC, Belgium). 

According to this study, over the next five years the Ferroelectric RAM market will register a 3.7% CAGR in terms of revenue, the global market size will reach US$ 300 million by 2024, from US$ 240 million in 2019. In particular, this report presents the global market share (sales and revenue) of key companies in Ferroelectric RAM business, shared in Chapter 3.

This report presents a comprehensive overview, market shares, and growth opportunities of Ferroelectric RAM market by product type, application, key manufacturers and key regions and countries.

This study considers the Ferroelectric RAM value and volume generated from the sales of the following segments:

Segmentation by product type: breakdown data from 2014 to 2019, in Section 2.3; and forecast to 2024 in section 11.7.

  •  Serial Memory
  •  Parallel Memory
  •  Others

Segmentation by application: breakdown data from 2014 to 2019, in Section 2.4; and forecast to 2024 in section 11.8.
  •  Smart Meters
  •  Automotive Electronics
  •  Medical Devices
  •  Wearable Devices

This report also splits the market by region: Breakdown data in Chapter 4, 5, 6, 7 and 8.
  •  Americas
  •  United States
  •  Canada
  •  Mexico
  •  Brazil
  •  APAC
  •  China
  •  Japan
  •  Korea
  •  Southeast Asia
  •  India
  •  Australia
  •  Europe
  •  Germany
  •  France
  •  UK
  •  Italy
  •  Russia
  •  Spain
  •  Middle East & Africa
  •  Egypt
  •  South Africa
  •  Israel
  •  Turkey
  •  GCC Countries

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report: Breakdown data in in Chapter 3.
  •  Cypress Semiconductor
  •  Fujitsu
  •  Texas Instruments
  •  IBM
  •  Infineon

In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.

Research objectives
  •  To study and analyze the global Ferroelectric RAM consumption (value & volume) by key regions/countries, product type and application, history data from 2014 to 2018, and forecast to 2024.
  •  To understand the structure of Ferroelectric RAM market by identifying its various subsegments.
  •  Focuses on the key global Ferroelectric RAM manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.
  •  To analyze the Ferroelectric RAM with respect to individual growth trends, future prospects, and their contribution to the total market.
  •  To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).
  •  To project the consumption of Ferroelectric RAM submarkets, with respect to key regions (along with their respective key countries).
  •  To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
  •  To strategically profile the key players and comprehensively analyze their growth strategies.

1 Scope of the Report
1.1 Market Introduction
1.2 Research Objectives
1.3 Years Considered
1.4 Market Research Methodology
1.5 Economic Indicators
1.6 Currency Considered
 
2 Executive Summary
2.1 World Market Overview
2.1.1 Global Ferroelectric RAM Consumption 2014-2024
2.1.2 Ferroelectric RAM Consumption CAGR by Region
2.2 Ferroelectric RAM Segment by Type
2.2.1 Serial Memory
2.2.2 Parallel Memory
2.2.3 Others
2.3 Ferroelectric RAM Consumption by Type
2.3.1 Global Ferroelectric RAM Consumption Market Share by Type (2014-2019)
2.3.2 Global Ferroelectric RAM Revenue and Market Share by Type (2014-2019)
2.3.3 Global Ferroelectric RAM Sale Price by Type (2014-2019)
2.4 Ferroelectric RAM Segment by Application
2.4.1 Smart Meters
2.4.2 Automotive Electronics
2.4.3 Medical Devices
2.4.4 Wearable Devices
2.5 Ferroelectric RAM Consumption by Application
2.5.1 Global Ferroelectric RAM Consumption Market Share by Application (2014-2019)
2.5.2 Global Ferroelectric RAM Value and Market Share by Application (2014-2019)
2.5.3 Global Ferroelectric RAM Sale Price by Application (2014-2019)
 
3 Global Ferroelectric RAM by Players
3.1 Global Ferroelectric RAM Sales Market Share by Players
3.1.1 Global Ferroelectric RAM Sales by Players (2017-2019)
3.1.2 Global Ferroelectric RAM Sales Market Share by Players (2017-2019)
3.2 Global Ferroelectric RAM Revenue Market Share by Players
3.2.1 Global Ferroelectric RAM Revenue by Players (2017-2019)
3.2.2 Global Ferroelectric RAM Revenue Market Share by Players (2017-2019)
3.3 Global Ferroelectric RAM Sale Price by Players
3.4 Global Ferroelectric RAM Manufacturing Base Distribution, Sales Area, Product Types by Players
3.4.1 Global Ferroelectric RAM Manufacturing Base Distribution and Sales Area by Players
3.4.2 Players Ferroelectric RAM Products Offered
3.5 Market Concentration Rate Analysis
3.5.1 Competition Landscape Analysis
3.5.2 Concentration Ratio (CR3, CR5 and CR10) (2017-2019)
3.6 New Products and Potential Entrants
3.7 Mergers & Acquisitions, Expansion
 
4 Ferroelectric RAM by Regions
4.1 Ferroelectric RAM by Regions
4.1.1 Global Ferroelectric RAM Consumption by Regions
4.1.2 Global Ferroelectric RAM Value by Regions
4.2 Americas Ferroelectric RAM Consumption Growth
4.3 APAC Ferroelectric RAM Consumption Growth
4.4 Europe Ferroelectric RAM Consumption Growth
4.5 Middle East & Africa Ferroelectric RAM Consumption Growth
 
5 Americas
5.1 Americas Ferroelectric RAM Consumption by Countries
5.1.1 Americas Ferroelectric RAM Consumption by Countries (2014-2019)
5.1.2 Americas Ferroelectric RAM Value by Countries (2014-2019)
5.2 Americas Ferroelectric RAM Consumption by Type
5.3 Americas Ferroelectric RAM Consumption by Application
5.4 United States
5.5 Canada
5.6 Mexico
5.7 Key Economic Indicators of Few Americas Countries
 
6 APAC
6.1 APAC Ferroelectric RAM Consumption by Countries
6.1.1 APAC Ferroelectric RAM Consumption by Countries (2014-2019)
6.1.2 APAC Ferroelectric RAM Value by Countries (2014-2019)
6.2 APAC Ferroelectric RAM Consumption by Type
6.3 APAC Ferroelectric RAM Consumption by Application
6.4 China
6.5 Japan
6.6 Korea
6.7 Southeast Asia
6.8 India
6.9 Australia
6.10 Key Economic Indicators of Few APAC Countries
 
7 Europe
7.1 Europe Ferroelectric RAM by Countries
7.1.1 Europe Ferroelectric RAM Consumption by Countries (2014-2019)
7.1.2 Europe Ferroelectric RAM Value by Countries (2014-2019)
7.2 Europe Ferroelectric RAM Consumption by Type
7.3 Europe Ferroelectric RAM Consumption by Application
7.4 Germany
7.5 France
7.6 UK
7.7 Italy
7.8 Russia
7.9 Spain
7.10 Key Economic Indicators of Few Europe Countries
 
8 Middle East & Africa
8.1 Middle East & Africa Ferroelectric RAM by Countries
8.1.1 Middle East & Africa Ferroelectric RAM Consumption by Countries (2014-2019)
8.1.2 Middle East & Africa Ferroelectric RAM Value by Countries (2014-2019)
8.2 Middle East & Africa Ferroelectric RAM Consumption by Type
8.3 Middle East & Africa Ferroelectric RAM Consumption by Application
8.4 Egypt
8.5 South Africa
8.6 Israel
8.7 Turkey
8.8 GCC Countries
 
9 Market Drivers, Challenges and Trends
9.1 Market Drivers and Impact
9.1.1 Growing Demand from Key Regions
9.1.2 Growing Demand from Key Applications and Potential Industries
9.2 Market Challenges and Impact
9.3 Market Trends
 
10 Marketing, Distributors and Customer
10.1 Sales Channel
10.1.1 Direct Channels
10.1.2 Indirect Channels
10.2 Ferroelectric RAM Distributors
10.3 Ferroelectric RAM Customer
 
11 Global Ferroelectric RAM Market Forecast
11.1 Global Ferroelectric RAM Consumption Forecast (2019-2024)
11.2 Global Ferroelectric RAM Forecast by Regions
11.2.1 Global Ferroelectric RAM Forecast by Regions (2019-2024)
11.2.2 Global Ferroelectric RAM Value Forecast by Regions (2019-2024)
11.2.3 Americas Consumption Forecast
11.2.4 APAC Consumption Forecast
11.2.5 Europe Consumption Forecast
11.2.6 Middle East & Africa Consumption Forecast
11.3 Americas Forecast by Countries
11.3.1 United States Market Forecast
11.3.2 Canada Market Forecast
11.3.3 Mexico Market Forecast
11.3.4 Brazil Market Forecast
11.4 APAC Forecast by Countries
11.4.1 China Market Forecast
11.4.2 Japan Market Forecast
11.4.3 Korea Market Forecast
11.4.4 Southeast Asia Market Forecast
11.4.5 India Market Forecast
11.4.6 Australia Market Forecast
11.5 Europe Forecast by Countries
11.5.1 Germany Market Forecast
11.5.2 France Market Forecast
11.5.3 UK Market Forecast
11.5.4 Italy Market Forecast
11.5.5 Russia Market Forecast
11.5.6 Spain Market Forecast
11.6 Middle East & Africa Forecast by Countries
11.6.1 Egypt Market Forecast
11.6.2 South Africa Market Forecast
11.6.3 Israel Market Forecast
11.6.4 Turkey Market Forecast
11.6.5 GCC Countries Market Forecast
11.7 Global Ferroelectric RAM Forecast by Type
11.8 Global Ferroelectric RAM Forecast by Application
 
12 Key Players Analysis
12.1 Cypress Semiconductor
12.1.1 Company Details
12.1.2 Ferroelectric RAM Product Offered
12.1.3 Cypress Semiconductor Ferroelectric RAM Sales, Revenue, Price and Gross Margin (2017-2019)
12.1.4 Main Business Overview
12.1.5 Cypress Semiconductor News
12.2 Fujitsu
12.2.1 Company Details
12.2.2 Ferroelectric RAM Product Offered
12.2.3 Fujitsu Ferroelectric RAM Sales, Revenue, Price and Gross Margin (2017-2019)
12.2.4 Main Business Overview
12.2.5 Fujitsu News
12.3 Texas Instruments
12.3.1 Company Details
12.3.2 Ferroelectric RAM Product Offered
12.3.3 Texas Instruments Ferroelectric RAM Sales, Revenue, Price and Gross Margin (2017-2019)
12.3.4 Main Business Overview
12.3.5 Texas Instruments News
12.4 IBM
12.4.1 Company Details
12.4.2 Ferroelectric RAM Product Offered
12.4.3 IBM Ferroelectric RAM Sales, Revenue, Price and Gross Margin (2017-2019)
12.4.4 Main Business Overview
12.4.5 IBM News
12.5 Infineon
12.5.1 Company Details
12.5.2 Ferroelectric RAM Product Offered
12.5.3 Infineon Ferroelectric RAM Sales, Revenue, Price and Gross Margin (2017-2019)
12.5.4 Main Business Overview
12.5.5 Infineon News
 
13 Research Findings and Conclusion

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Semiconductors And IT
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