The report on the Global High-k And ALD/CVD Metal Precursors Market gives an estimation of the development of the market based on historical studies and also provides forecasts on the basis of a comprehensive research. The report gives a complete market analysis for the forecasted period from 2020 to 2026. The market is divided into various segments with an in-depth outlook of the competitors and a listing of the profiled key players. The market size in terms of revenue (USD MN) is calculated and provided for the study period along with the dynamics of the market such as the drivers and the restraints.
High-k refers to dielectric materials which uses ALD and CVD metal precursors technique and technology to fabricate materials used to produce semiconductor devices. ALD atomic layer deposition is a technique used to produce thin films of standard quality. CVD chemical vapor deposition is a process used to make excellent quality and high performance devices. ALD and CVD use gas and chemical deposition techniques respectively to produce excellent dielectric and semiconductor devices.
ALD and CVD techniques are extensively used in various applications which include, semiconductor devices, microelectronics, LED dielectrics and in biomedical applications. Global high-k ALD/CVD metal precursors market is segmented on the basis of technology into capacitor, interconnect and high-k gates. Capacitor technology is the most extensively used technology due to its high performance and eminent applications in the electronic market.
Extensive use of ALD and CVD technology in the microelectronics field accompanied by growth of nanotechnology significantly surge rapid growth of this market. In addition, polymerization and microfabrication of semiconductor devices by CVD along with use of ALD in Dynamic RAMs and biomedical field will further augment the growth of this market. Efforts by vendors of this market in research and development of high-k metal precursors technology using ALD and CVD is expected to drive this marker for the forecast. High initial cost and complex designing techniques are major restraints of this market.
Asia Pacific is geography wise the most dominant region for the global high-k and ALD/CVD metal precursors market. Major regions like India China and Taiwan augment market growth of Asia Pacific region. Europe and North America are expected to show moderate growth for the forecast.
Key participants in the global high-k and ALD/CVD metal precursors market are:
- Dow Chemical
- JSR Corporation
- Adeka Corporation
- Dynamic Network Factory Inc.
- NANMAT
- Samsung Electronic
- Air Liquide
- SAFC Hitech
- Praxair
- Air Products & Chemical
SEGMENTATIONS IN REPORT:
High-k And ALD/CVD Metal Precursors By Technology
- Interconnect
- Capacitor
- High-K Gates
High-k And ALD/CVD Metal Precursors By Geography
- North America
- Europe
- Asia Pacific
- Latin America
- Middle East And Africa
The Global High-k And ALD/CVD Metal Precursors Market has been exhibited in detail in the following chapters -
Chapter 1 High-k And ALD/CVD Metal Precursors Market Preface
Chapter 2 Executive Summary
Chapter 3 High-k And ALD/CVD Metal Precursors Industry Analysis
Chapter 4 High-k And ALD/CVD Metal Precursors Market Value Chain Analysis
Chapter 5 High-k And ALD/CVD Metal Precursors Market Analysis By Technology
Chapter 6 High-k And ALD/CVD Metal Precursors Market Analysis By Geography
Chapter 7 Competitive Landscape Of High-k And ALD/CVD Metal Precursors Companies
Chapter 8 Company Profiles Of High-k And ALD/CVD Metal Precursors Industry